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SI7322DN Dataheets PDF



Part Number SI7322DN
Manufacturers Vishay
Logo Vishay
Description N-Channel 100-V (D-S) MOSFET
Datasheet SI7322DN DatasheetSI7322DN Datasheet (PDF)

New Product N-Channel 100-V (D-S) MOSFET Si7322DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.058 at VGS = 10 V PowerPAK® 1212-8 ID (A)a 18 Qg (Typ.) 13 nC 3.30 mm S 1S 3.30 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: Si7322DN-T1-E3 (Lead (Pb)-free) Si7322DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Primary Switch • Isolated DC/DC Converters D G S .

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New Product N-Channel 100-V (D-S) MOSFET Si7322DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.058 at VGS = 10 V PowerPAK® 1212-8 ID (A)a 18 Qg (Typ.) 13 nC 3.30 mm S 1S 3.30 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: Si7322DN-T1-E3 (Lead (Pb)-free) Si7322DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Primary Switch • Isolated DC/DC Converters D G S N-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 100 ± 20 18a 16a 5.5b, c 4.4b, c 20 18a 3.2b, c 19 18 52 33 3.8b, c 2.4b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 26 1.9 33 °C/W 2.4 Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 81 °C/W. Document Number: 69638 S-81549-Rev. B, 07-Jul-08 www.vishay.com 1 Si7322DN Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage ΔVDS/TJ ΔVGS(th)/TJ VGS(th) ID = 250 µA VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS ID(on) RDS(on) gfs VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 5.5 A VDS = 15 V, ID = 5.5 A Dynamicb Input Capacitance Ciss Output Capacitance Coss VDS = 50 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Gate-Drain Charge Qgs VDS = 50 V, VGS = 10 V, ID = 5.5 A Qgd Gate Resistance Rg f = 1 MHz Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) VDD = 50 V, RL = 11.4 Ω ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω Fall Time tf Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C Pulse Diode Forward Current ISM Body Diode Voltage VSD IS = 4.4 A, VGS = 0 V Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Qrr ta IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Min. 100 2.5 20 Typ. Max. Unit 130 - 10 0.048 10 V mV/°C 4.4 ± 100 1 10 0.058 V nA µA A Ω S 750 80 25 13 20 3.7 3 1.3 10 15 10 15 12 20 10 15 pF nC Ω ns 18 A 20 0.8 1.2 V 40 60 ns 70 105 nC 30 ns 10 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69638 S-81549-Rev. B, 07-Jul-08 New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 VGS = 10 thru 5 V 16 4 Si7322DN Vishay Siliconix I D - Drain Current (A) I D - Drain Current (A) 12 3 8 VGS = 4 V 4 0 0.0 0.060 VGS = 3 V 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 3.0 0.056 2 1 0 0 1000 800 TC = 25 °C TC = 125 °C 123 TC = - 55 °C 456 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.052 0.048 VGS = 10 V 600 400 VGS - Gate-to-Source Voltage (V) 0.044 0.040 0 4 8 12 16 20 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 5.5 A 8.


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