Document
New Product
N-Channel 100-V (D-S) MOSFET
Si7322DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
100 0.058 at VGS = 10 V
PowerPAK® 1212-8
ID (A)a 18
Qg (Typ.) 13 nC
3.30 mm
S 1S
3.30 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Ordering Information: Si7322DN-T1-E3 (Lead (Pb)-free) Si7322DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Primary Switch • Isolated DC/DC Converters
D
G
S N-Channel MOSFET
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current Single Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
Limit
100
± 20 18a 16a 5.5b, c 4.4b, c
20 18a 3.2b, c
19
18
52
33 3.8b, c 2.4b, c
- 55 to 150
260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t ≤ 10 s Steady State
RthJA RthJC
26 1.9
33 °C/W
2.4
Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 69638 S-81549-Rev. B, 07-Jul-08
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Si7322DN
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage
ΔVDS/TJ ΔVGS(th)/TJ
VGS(th)
ID = 250 µA VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea
IDSS
ID(on) RDS(on)
gfs
VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 5.5 A VDS = 15 V, ID = 5.5 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 50 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge Gate-Drain Charge
Qgs VDS = 50 V, VGS = 10 V, ID = 5.5 A Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time Turn-Off Delay Time
tr td(off)
VDD = 50 V, RL = 11.4 Ω ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 4.4 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge Reverse Recovery Fall Time
Qrr ta
IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing.
Min. 100 2.5
20
Typ. Max. Unit
130 - 10
0.048 10
V
mV/°C
4.4 ± 100
1 10
0.058
V nA
µA
A Ω S
750 80 25 13 20 3.7 3 1.3 10 15 10 15 12 20 10 15
pF
nC Ω ns
18 A
20
0.8 1.2
V
40 60 ns
70 105 nC
30 ns
10
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 69638 S-81549-Rev. B, 07-Jul-08
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 5 VGS = 10 thru 5 V
16 4
Si7322DN
Vishay Siliconix
I D - Drain Current (A)
I D - Drain Current (A)
12 3
8 VGS = 4 V
4 0 0.0
0.060
VGS = 3 V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V) Output Characteristics
3.0
0.056
2 1 0
0
1000 800
TC = 25 °C
TC = 125 °C 123
TC = - 55 °C 456
VGS - Gate-to-Source Voltage (V) Transfer Characteristics
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.052 0.048
VGS = 10 V
600 400
VGS - Gate-to-Source Voltage (V)
0.044
0.040 0 4 8 12 16 20
ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage
10
ID = 5.5 A 8.