SI2392ADS

www.vishay.com Si2392ADS Vishay Siliconix N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.126 at VGS = 10 V 100 0.144 at VGS = 6 V 0.189 at VGS = 4.5 V SOT-23 (TO-236) ID (A) a 3.1 2.9 2.6 Qg (TYP.) 2.9 nC D 3 2 S 1 G Top View Marking Code: G2 Ordering Information: Si2392ADS-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS DC/DC converters / boost converters Load switch LED backlighting in LCD TVs Power management for mobile computing G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT 100 ± 20 3.1 2.5 2.2 b, c 1.8 b, c 8 2.1 1 b, c 3 0.45 2.5 1.6 1.25 b, c 0.8 b, c -55 to 150 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient b, d t≤5s Maximum Junction-to-Foot (Drain) Steady State Notes a. Based on TC = 25 °C. b. Surface mounte...