SIR418DP

N-Channel 40-V (D-S) MOSFET SiR418DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 0.005 at VGS = 10 V 0.006 at VGS = 4.5 V ID (A)a 40 40 Qg (Typ.) 24 FEATURES Halogen-free According to IEC 61249-2-21 Definition Qg Optimized 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 6.15 mm S 1S 5.15 mm 2 S 3 G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiR418DP-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS DC/DC Conversion Industrial D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 40 ± 20 40a 40a 23.5b, c 18.8b, c 70 35 4.5b, c 30 45 39 25 5b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Notes: t ≤ 10 s Steady State RthJA RthJC 20 2.1 25 °C/W 3.2 a. Based on TC = 25 °C. Package limited. b. Surface mounted on 1" x 1"...