SIR416DP

New Product N-Channel 40-V (D-S) MOSFET SiR416DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0038 at VGS = 10 V 40 0.0042 at VGS = 4.5 V PowerPAK SO-8 ID (A)a, e 50 50 Qg (Typ.) 28.2 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View Ordering Information: SiR416DP-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS POL Synchronous Rectification D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage TC = 25 °C VGS Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature)f, g Limit 40 ± 20 50e 50e 27.5b, c 21.9b, c 70 50e 4.7b, c 40 80 69 44.4 5.2b, c 3.3b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 19 1.2 24 °C/W 1.8 Notes: a. Based on TC = 25 °C. b. Sur...