SIE868DF

New Product N-Channel 40-V (D-S) MOSFET SiE868DF Vishay Siliconix PRODUCT SUMMARY ID (A)a VDS (V) RDS(on) (Ω) Silicon Package Limit Limit Qg (Typ.) 0.0023 at VGS = 10 V 169 40 0.0029 at VGS = 4.5 V 150 60 45 nC 60 Package Drawing www.vishay.com/doc?72945 PolarPAK 10 9 8 7 6 D GS S D 67 8 9 10 D D S GD FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen III Power MOSFET Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size, ≤ 100 V Low Qgd/Qgs Ratio Helps Prevent Shoot-Through 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch Half Bridge D G D GS S 1 23 4 Top View D 5 54 32 1 Bottom View Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE868DF-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET For Related Documents www.vishay.com/ppg?65006 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage ...