BUF646A

TELEFUNKEN Semiconductors BUF646 BUF646A Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage 95 9630 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage Test Conditions Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range xTcase 25°C Type BUF646 BUF646A BUF646 BUF646A Symbol VCEO VCEO VCES VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 450 850 1000 9 7 14 3 5 70 150 –65 to +150 Unit V V V V V A A A A W °C °C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 1.78 Unit K/W Rev. A1: 01.05.1995 1 (8) BUF646 BUF646A TELEFUNKEN Semiconductors Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Test Conditions Type Symbol Min Typ Max Unit Collector cut-off current VCE = 850 V VCE = 1000 V VCE = 850 V; Tcase = 150°C VCE = 1000 V; Tcase = 150°C BUF646 BUF646A BUF646 BUF646A ICES ICES ICES ICES 100 mA 100 mA 0.5 mA 0.5 mA Collector-emitter breakdown voltage (figure 1) IC = 500...