2SB715, 2SB716, 2SB716A
Silicon PNP Epitaxial
Application
• Low frequency high voltage amplifier • Complementary pair w...
2SB715, 2SB716, 2SB716A
Silicon
PNP Epitaxial
Application
Low frequency high voltage amplifier Complementary pair with 2SD755, 2SD756 and 2SD756A
Outline
TO-92MOD
3 2 1
1. Emitter 2. Collector 3. Base
2SB715, 2SB716, 2SB716A
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
2SB715 –100 –100 –5 –50 750 150 –55 to +150
2SB716 –120 –120 –5 –50 750 150 –55 to +150
2SB716A –140 –140 –5 –50 750 150 –55 to +150
Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
2SB715
2SB716
2SB716A
Item
Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base breakdown voltage
V(BR)CBO –100 — — –120 — — –140 — — V IC = –10 µA, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO –100 — — –120 — — –140 — — V IC = –1 mA, RBE = ∞
Collector cutoff current ICBO
— — –0.5 — — — — — — µA VCB = –80 V, IE = 0
— — — — — –0.5 — — –0.5 µA VCB = –100 V, IE = 0
DC current transfer ratio hFE1*1 250 — 800 250 — 800 250 — 500
VCE = –12 V, IC = –2 mA
hFE2 125 — — 125 — — 125 — —
VCE = –12 V, IC = –10 mA
Base to emitter voltage VBE
— — –0.75 — — –0.75 — — –0.75 V
VCE = –12 V, IC = –2 mA
Collector to emitter saturation voltage
VCE(sat) — — –0.2 — — –0.2 — — –0.2 V
IC = –10 mA, IB = –1 mA
Gain bandwidth product fT
— 150 —
— 150 —
— 150 —
MHz VCE = –1...