NDF60N360U1

NDF60N360U1, NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDF NDD Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC Steady State TC = 25°C TC = 100°C VDSS VGS ID 600 ±25 13 (Note 1) 11 8.1 (Note 1) 6.9 V V A Power Steady TC = PD 30 114 W Dissipation – State 25°C RqJC Pulsed Drain Current tp = 10 ms IDM 51 44 A Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy TJ, TSTG IS EAS −55 to +150 13 11 64 °C A mJ RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 15) VISO 4500 − V Peak Diode Recovery (Note 2) Lead Temperature for Soldering Leads dv/dt TL 15 V/ns 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Limited by maximum junction temperature 2. ISD ≤ 11 A, di/dt ≤ 400 A/ms, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS THERMAL RESISTANCE Parameter Junction−to−Case (Drain) NDF60N360U1 NDD60N360U1 Symbol RqJC Value 4.1 1.1 Unit °C/W Junction−to−Ambient Steady State (Note 3) NDF60N360U1 (Note 4) ...