DatasheetsPDF.com

NDD60N900U1 Dataheets PDF



Part Number NDD60N900U1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet NDD60N900U1 DatasheetNDD60N900U1 Datasheet (PDF)

NDD60N900U1 N-Channel Power MOSFET 600 V, 900 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 600 V Gate−to−Source Voltage VGS ±25 V Continuous Drain Current RqJC Steady State TC = 25°C TC = 100°C ID 5.7 A 3.6 Power Dissipation Steady – RqJC State TC = 25°C PD 74 W Pulsed Drain Current tp = 10 ms I.

  NDD60N900U1   NDD60N900U1


NDD60N745U1 NDD60N900U1 NDDL1N60Z


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)