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MTS9539G6 Dataheets PDF



Part Number MTS9539G6
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet MTS9539G6 DatasheetMTS9539G6 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C094G6 Issued Date : 2015.10.27 Revised Date : Page No. : 1/13 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTS9539G6 Description The MTS9539G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mou.

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CYStech Electronics Corp. Spec. No. : C094G6 Issued Date : 2015.10.27 Revised Date : Page No. : 1/13 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTS9539G6 Description The MTS9539G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications. Features • Simple drive requirement • Low gate charge • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package • ESD diode protected gate (Tr 1, N-channel) Equivalent Circuit MTS9539G6 Outline TSOP-6 S2 G2 D1 G:Gate S:Source D:Drain Pin 1 D2 S1 G1 Ordering Information Device MTS9539G6-0-T1-G Package TSOP-6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTS9539G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C094G6 Issued Date : 2015.10.27 Revised Date : Page No. : 2/13 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1) Continuous Drain Current @TA=70 °C (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Symbol BVDSS VGS ID IDM PD Tj, Tstg Rth,ja Limits N-channel P-channel 60 -30 ±20 ±20 0.6 -3.7 0.48 -3.0 1.8 -30 1.14 0.01 -55~+150 110 Unit V A W W / °C °C °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) 60 0.8 - - *GFS 100 Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd - Source-Drain Diode *IS - *ISM - *VSD - - 1.5 V VGS=0V, ID=250μA VDS=3V, ID=100μA - ±10 VGS=±20V, VDS=0V - 1 μA VDS=60V, VGS=0V - 10 VDS=48V, VGS=0, Tj=70°C 1.0 2 ID=300mA, VGS=10V 1.2 2.5 Ω ID=100mA, VGS=4V 1.6 3 ID=10mA, VGS=2.5V 270 - mS VDS=10V, ID=100mA 36 - 14 - pF VDS=25V, VGS=0V, f=1MHz 1.3 - 6- 15.8 14.8 - ns VDS=30V, ID=100mA, VGS=5V, RG=25Ω 21.4 - 1.12 - 0.24 - nC VDS=30V, ID=0.3A, VGS=4.5V 0.44 - - 0.6 - 1.8 0.79 1.2 A V VGS=0V, IS=100mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTS9539G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C094G6 Issued Date : 2015.10.27 Revised Date : Page No. : 3/13 P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS -30 -1 - - - - -2.5 V VGS=0V, ID=-250μA VDS=VGS, ID=-250μA - ±100 nA VGS=±20V, VDS=0V - -1 -25 μA VDS=-24V, VGS=0V VDS=-24V, VGS=0V, Tj=70°C 43 54 ID=-5A, VGS=-10V 53 69 mΩ ID=-3.7A, VGS=-4.5V 56 73 ID=-3A, VGS=-4V 3 - S VDS=-10V, ID=-1A Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd - Source-Drain Diode *IS - *ISM - *VSD - 619 76 61 14.2 21.2 45.8 24.2 6.4 1.9 1.8 -0.77 - -1 -4 -1.2 pF VDS=-15V, VGS=0V, f=1MHz ns VDS=-10V, ID=-1A, VGS=-4.5V, RG=6Ω, RD=10Ω nC VDS=-10V, ID=-3.7A, VGS=-4.5V A V VGS=0V, IS=-1A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTS9539G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C094G6 Issued Date : 2015.10.27 Revised Date : Page No. : 4/13 N-channel Characteristic Curves ID, Drain Current(A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Typical Output Characteristics 10V,9V,8V,7V,6V,5V 4V 3.5V 3V 2.5V VGS=2V 5 10 15 20 VDS, Drain-Source Voltage(V) 25 Static Drain-Source On-State resistance vs Drain Current 10 VGS=2.5V BVDSS, Normalized Drain-Source Breakdown Voltage Brekdown Voltage vs Junction Temperature 1.2 1.1 1 0.9 0.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=0V 1 Tj=25°C 0.8 1 Tj=150°C 0.6 VGS=4V VGS=10V 0.4 VSD, Source-Drain Voltage(V) RDS(on),Static Drain-Source On-State Resistance(Ω) RDS(on), Static Drain-Source OnState Resistance(Ω) 0.1 0.001 0.01 0.1 ID, Drain Current(A) 1 Static Drain-Source On-State Resistance vs Gate-Source Voltage 2 1.8 1.6 ID=100mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(on), Normalized Static DrainSource On-State Resistance 0.2 0 0.2 0.4 0.6 0.8 IDR, Reverse Drain Current(A) 1 Drain-Source On-State Resistance vs Junction Tempearture 2 1.8 VGS=4V, ID=100mA RDSON@Tj=25°C : 1.2Ωtyp. .


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