Document
CYStech Electronics Corp.
Spec. No. : C094G6 Issued Date : 2015.10.27 Revised Date : Page No. : 1/13
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTS9539G6
Description
The MTS9539G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement • Low gate charge • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package • ESD diode protected gate (Tr 1, N-channel)
Equivalent Circuit
MTS9539G6
Outline
TSOP-6
S2 G2 D1
G:Gate S:Source D:Drain
Pin 1
D2 S1 G1
Ordering Information
Device MTS9539G6-0-T1-G
Package
TSOP-6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products Product name
MTS9539G6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C094G6 Issued Date : 2015.10.27 Revised Date : Page No. : 2/13
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1) Continuous Drain Current @TA=70 °C (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1)
Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol BVDSS
VGS
ID
IDM PD
Tj, Tstg Rth,ja
Limits N-channel P-channel
60 -30 ±20 ±20
0.6 -3.7 0.48 -3.0
1.8 -30 1.14 0.01
-55~+150 110
Unit
V
A
W W / °C
°C °C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static BVDSS VGS(th) IGSS IDSS
*RDS(ON)
60 0.8 -
-
*GFS
100
Dynamic
Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
-
1.5
V
VGS=0V, ID=250μA VDS=3V, ID=100μA
- ±10
VGS=±20V, VDS=0V
- 1 μA VDS=60V, VGS=0V
- 10
VDS=48V, VGS=0, Tj=70°C
1.0 2
ID=300mA, VGS=10V
1.2 2.5 Ω ID=100mA, VGS=4V
1.6 3
ID=10mA, VGS=2.5V
270 - mS VDS=10V, ID=100mA
36 -
14 - pF VDS=25V, VGS=0V, f=1MHz
1.3 -
6-
15.8 14.8 -
ns VDS=30V, ID=100mA, VGS=5V, RG=25Ω
21.4 -
1.12 -
0.24 - nC VDS=30V, ID=0.3A, VGS=4.5V
0.44 -
- 0.6 - 1.8 0.79 1.2
A
V VGS=0V, IS=100mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTS9539G6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C094G6 Issued Date : 2015.10.27 Revised Date : Page No. : 3/13
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static BVDSS VGS(th) IGSS IDSS
*RDS(ON)
*GFS
-30 -1 -
-
-
-
-2.5
V
VGS=0V, ID=-250μA VDS=VGS, ID=-250μA
-
±100
nA VGS=±20V, VDS=0V
-
-1 -25
μA
VDS=-24V, VGS=0V VDS=-24V, VGS=0V, Tj=70°C
43 54
ID=-5A, VGS=-10V
53 69 mΩ ID=-3.7A, VGS=-4.5V
56 73
ID=-3A, VGS=-4V
3 - S VDS=-10V, ID=-1A
Dynamic
Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
619 76 61 14.2 21.2 45.8 24.2 6.4 1.9 1.8
-0.77
-
-1 -4 -1.2
pF VDS=-15V, VGS=0V, f=1MHz
ns
VDS=-10V, ID=-1A, VGS=-4.5V, RG=6Ω, RD=10Ω
nC VDS=-10V, ID=-3.7A, VGS=-4.5V
A
V VGS=0V, IS=-1A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTS9539G6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C094G6 Issued Date : 2015.10.27 Revised Date : Page No. : 4/13
N-channel Characteristic Curves
ID, Drain Current(A)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
0
Typical Output Characteristics
10V,9V,8V,7V,6V,5V 4V 3.5V
3V
2.5V VGS=2V
5 10 15 20 VDS, Drain-Source Voltage(V)
25
Static Drain-Source On-State resistance vs Drain Current 10
VGS=2.5V
BVDSS, Normalized Drain-Source Breakdown Voltage
Brekdown Voltage vs Junction Temperature
1.2
1.1
1
0.9
0.8
-75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V 1
Tj=25°C
0.8
1 Tj=150°C 0.6
VGS=4V
VGS=10V
0.4
VSD, Source-Drain Voltage(V)
RDS(on),Static Drain-Source On-State Resistance(Ω)
RDS(on), Static Drain-Source OnState Resistance(Ω)
0.1 0.001
0.01 0.1 ID, Drain Current(A)
1
Static Drain-Source On-State Resistance vs Gate-Source Voltage
2
1.8 1.6 ID=100mA
1.4 1.2
1 0.8
0.6 0.4
0.2 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
RDS(on), Normalized Static DrainSource On-State Resistance
0.2 0
0.2 0.4 0.6 0.8 IDR, Reverse Drain Current(A)
1
Drain-Source On-State Resistance vs Junction Tempearture
2 1.8 VGS=4V, ID=100mA
RDSON@Tj=25°C : 1.2Ωtyp. .