N-Channel Enhancement Mode MOSFET
CYStech Electronics Corp.
Spec. No. : C099I3 Issued Date : 2015.10.28 Revised Date : Page No. : 1/10
N-Channel Enhance...
Description
CYStech Electronics Corp.
Spec. No. : C099I3 Issued Date : 2015.10.28 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN6N65BI3S
BVDSS ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=3A
650V 6A
1.2Ω(typ)
Features
Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package
Symbol
MTN6N65BI3S
Outline
TO-251S
G:Gate D:Drain S:Source
GDS
Ordering Information
Device MTN6N65BI3S-0-UA-G
Package
TO-251S (RoHS compliant and halogen-free package)
Shipping 80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products
Product name
MTN6N65BI3S
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C099I3 Issued Date : 2015.10.28 Revised Date : Page No. : 2/10
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Pulsed Drain Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TA=25℃)
Symbol
VDS VGS
ID
IDM EAS IAS EAR
TL
Limits
650 ±30
6 3.8 24 106 5.5 9
300
1.25
Unit
V
A
mJ A mJ °C W
Total Power Dissipation (TC=25℃) Line...
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