MTN2310AM3

CYStech Electronics Corp. Spec. No. : C109M3 Issued Date : 2015.10.19 Revised Date : Page No. : 1/9 60V N-Channel Enhancement Mode MOSFET MTN2310AM3 BVDSS ID@VGS=10V, TA=25°C RDSON@VGS=10V, ID=4A RDSON@VGS=5V, ID=3A 60V 5.3A 33.7mΩ(typ) 43.1mΩ(typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol MTN2310AM3 Outline SOT-89 G：Gate S：Source D：Drain GD D S Ordering Information Device MTN2310AM3-0-T2-G Package Shipping SOT-89 (Pb-free lead plating and halogen-free package) 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name MTN2310AM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C109M3 Issued Date : 2015.10.19 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current @ TA=25°C, VGS=10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=10V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ (Note 3) Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj ; Tstg Limits 60 ±20 5.3 4.4 30 2.4 0.016 -55~+175 Unit V A W W/°C °C Thermal Performance Parameter Symbol Limit Thermal Resistance, Junction-to-Ambient, max (Note 3) RθJA 62.5 Therm...