MTE110P10KQ8

CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTE110P10KQ8 Features Simple drive requirement Low on-resistance Fast switching speed ESD protected gate Pb-free and Halogen-free package BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-6V, ID=-2A -100V -3.7A 97mΩ(typ) 113mΩ(typ) Equivalent Circuit MTE110P10KQ8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTE110P10KQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE110P10KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C , VGS=-10V Continuous Drain Current @TA=70 °C , VGS=-10V Pulsed Drain Current (Note 1) Single Pulse Avalanche Current Single Pulse Avalanche Energy @ L=5mH, IAS=-3.7A, VDD=-25V Power Dissipation (Note 2) TA=25 °C TA=70 °C Operating Junction and Storage Temperature Range Symbol BVDSS VGS ID IDM IAS EAS PD Tj ; Tstg Note : 1.Pulse width limited by maxim...