MTD9D0N06H8

CYStech Electronics Corp. Spec. No. : C912H8 Issued Date : 2015.11.02 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTD9D0N06H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDSON(TYP) VGS=10V, ID=25A VGS=4.5V, ID=25A Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-free lead plating and Halogen-free package 60V 56A 13.8A 5.1mΩ 7.4mΩ Symbol MTD9D0N06H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTD9D0N06H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTD9D0N06H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C912H8 Issued Date : 2015.11.02 Revised Date : Page No. : 2/10 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V (silicon limit) (Note 1) Continuous Drain Current @ TC=25°C, VGS=10V (package limit) (Note 1) Continuous Drain Current @ TC=100°C, VGS=10V (Note 1) Continuous Drain Current @ TA=25°C, VGS=10V (Note 2) Continuous Drain Current @ TA=70°C, VGS=10V (Note 2) Continuous Drain Current @ TA=85°C, VGS=10V (Note 2) Pulsed Drain Current (Note 3) Avala...