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MTC3586BDFA6

Cystech Electonics

N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp. Spec. No. : C835DFA6 Issued Date : 2015.11.02 Revised Date : Page No. : 1/13 N- AND P-Channe...


Cystech Electonics

MTC3586BDFA6

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Description
CYStech Electronics Corp. Spec. No. : C835DFA6 Issued Date : 2015.11.02 Revised Date : Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTC3586BDFA6 N-CH BVDSS 20V P-CH -20V ID 5A(VGS=4.5V) -3.3A(VGS=-4.5 V) 27mΩ(VGS=4.5V) 78mΩ(VGS=-4.5V) Description RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V) The MTC3586BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2*2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2*2-6L package is universally preferred for all commercial-industrial surface mount applications. Features Simple drive requirement Low gate charge Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package Equivalent Circuit MTC3586BDFA6 Outline DFN2×2-6L G:Gate S:Source D:Drain Ordering Information Device Package MTC3586BDFA6-0-T1-G DFN2×2-6L (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTC3586BDFA6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C835DFA6 Issued Date : 2015.11.02 Revised Date : Page No. : 2/13 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol D...




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