MTB2N60E

MTB2N60E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature TMOS POWER FET 2.0 AMPERES, 600 VOLTS RDS(on) = 3.8 W CASE 418B−02, Style 2 D2PAK D ®G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 600 Vdc Drain−to−Gate Voltage (RGS = 1.0 MΩ) VDGR 600 Vdc Gate−to−Source Voltage — Continuous — Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current — Continuous — Continuous @ 100°C — Sing...