MTB032P06AV8

CYStech Electronics Corp. Spec. No. : C924V8 Issued Date : 2015.10.26 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB032P06AV8 BVDSS ID@VGS=-10V, TC=25°C RDSON@VGS=10V, ID=-6A RDSON@VGS=-4.5V, ID=-4A Description -60V -25A 30mΩ(typ) 35mΩ(typ) The MTB032P06AV8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package Equivalent Circuit MTB032P06AV8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device MTB032P06AV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB032P06AV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C924V8 Issued Date : 2015.10.26 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current Ava...