Document
CYStech Electronics Corp.
Spec. No. : C955H8 Issued Date : 2015.11.02 Revised Date : Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTB025C04H8
Features
• Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V)
N-CH 40V 7.3A
21A 18.3mΩ
26.6mΩ
P-CH -40V -6.6A
-19A 28.3mΩ
41.3mΩ
Equivalent Circuit
MTB025C04H8
Outline
Pin 1
DFN5×6
G:Gate S:Source D:Drain
Ordering Information
Device MTB025C04H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB025C04H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C955H8 Issued Date : 2015.11.02 Revised Date : Page No. : 2/13
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
TA=25 °C, VGS=10V (-10V)
Continuous Drain Current TA=70 °C, VGS=10V (-10V) TC=25 °C, VGS=10V (-10V)
TC=100 °C, VGS=10V (-10V)
Pulsed Drain Current (Note 1 & 2)
TA=25 °C
Power Dissipation
TA=70 °C TC=25 °C
TC=100 °C
Operating Junction and Storage Temperature Range
Symbol BVDSS
VGS IDSM
ID IDM PDSM
PD Tj; Tstg
Limits N-channel P-channel
40 -40 ±20 ±20
7.3 -6.6 5.8 -5.3 21 -19 13.3 -12 40 -40
2.5 (Note 3) 1.6 (Note 3) 21 8.4 -55~+150
Unit V A
W °C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max
Rth,j-c Rth,j-a
6 50 (Note 3)
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS VGS(th)
40 1.0
-
2.5
V
VGS=0V, ID=250μA VDS=VGS, ID=250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
1 25
μA
VDS=32V, VGS=0V VDS=32V, VGS=0, Tj=125°C
*RDS(ON)
-
18.3 26.6
26 35
mΩ
ID=12A, VGS=10V ID=10A, VGS=4.5V
*GFS
- 5.4 - S VDS=10V, ID=7A
Dynamic
Ciss Coss Crss *td(ON) *tr *td(OFF) *tf
- 570 855
- 45 - pF VDS=25V, VGS=0V, f=1MHz
- 40 -
- 7.2 -
-
17 24.8 -
ns VDS=20V, ID=1A, VGS=10V, RG=6Ω
- 7.4 -
MTB025C04H8
CYStek Product Specification
*Qg *Qgs *Qgd
Body Diode *VSD
*trr *Qrr
-
-
-
CYStech Electronics Corp.
Spec. No. : C955H8 Issued Date : 2015.11.02 Revised Date : Page No. : 3/13
69 2.4 - nC VDS=25V, ID=5A, VGS=4.5V
2.2 -
0.75 1
V VGS=0V, IS=1A
6.3 2.4
-
ns nC
IF=5A dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS VGS(th)
-40 -1.0
-
-2.5
V
VGS=0V, ID=-250μA VDS=VGS, ID=-250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
-1 -25
μA
VDS=-32V, VGS=0V VDS=-32V, VGS=0V, Tj=125°C
*RDS(ON)
-
28.3 41.3
37 54
mΩ
ID=-12A, VGS=-10V ID=-10A, VGS=-4.5V
*GFS
- 8.4 - S VDS=-10V, ID=-5A
Dynamic
Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd
Body Diode *VSD
*trr *Qrr
-
-
-
971 80 66 7.8 17.6 61.2 24 10 3.2 3.8
-0.75 8.8 3.6
1457 15 -
-1
-
pF VDS=-25V, VGS=0V, f=1MHz
ns VDS=-20V, ID=-1A, VGS=-10V, RG=6Ω
nC VDS=-25V, ID=-4.9A, VGS=-4.5V
V VGS=0V, IS=-1A
ns nC
IF=-5A dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB025C04H8
CYStek Product Specification
CYStech Electronics Corp.
Recommended Soldering Footprint
Spec. No. : C955H8 Issued Date : 2015.11.02 Revised Date : Page No. : 4/13
unit : mm
MTB025C04H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C955H8 Issued Date : 2015.11.02 Revised Date : Page No. : 5/13
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics 40
Brekdown Voltage vs Ambient Temperature 1.4
BVDSS, Normalized Drain-Source Breakdown Voltage
ID, Drain Current(A)
35 6V 1.2 30 10V, 9V, 8V, 7V
25 1 5V
20 0.8
15 4.5V
10
5
0 0
VGS=3V
4V 3.5V
1 23 4 VDS, Drain-Source Voltage(V)
5
0.6 ID=250μA, VGS=0V
0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage 1.2
VSD, Source-Drain Voltage(V)
RDS(ON), Static Drain-Source On-State Resistance(mΩ)
VGS=3V
VGS=4V
100
VGS=4.5V
10 0.01
VGS=10V
0.1 1 10 ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source Voltage
100
90 80 ID=12A 70 60
50 40
30 20
10 0
0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
RDS(ON), Normalized Static DrainSource On-State Resistance
1 Tj=25°C
0.8
0.6 Tj=150°C
0.4
0.2 0
2 46 8 IDR, Rever.