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MTB025C04H8 Dataheets PDF



Part Number MTB025C04H8
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description N- AND P-Channel Enhancement Mode MOSFET
Datasheet MTB025C04H8 DatasheetMTB025C04H8 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C955H8 Issued Date : 2015.11.02 Revised Date : Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTB025C04H8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 40V 7.3A 21A 18.3mΩ 26.6mΩ P-CH -40V -6.6A -19A 28.3mΩ 41.3mΩ Equivalent Circuit MTB025C04H8 Out.

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CYStech Electronics Corp. Spec. No. : C955H8 Issued Date : 2015.11.02 Revised Date : Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTB025C04H8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 40V 7.3A 21A 18.3mΩ 26.6mΩ P-CH -40V -6.6A -19A 28.3mΩ 41.3mΩ Equivalent Circuit MTB025C04H8 Outline Pin 1 DFN5×6 G:Gate S:Source D:Drain Ordering Information Device MTB025C04H8-0-T6-G Package Shipping DFN 5 ×6 (Pb-free lead plating & halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB025C04H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C955H8 Issued Date : 2015.11.02 Revised Date : Page No. : 2/13 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage TA=25 °C, VGS=10V (-10V) Continuous Drain Current TA=70 °C, VGS=10V (-10V) TC=25 °C, VGS=10V (-10V) TC=100 °C, VGS=10V (-10V) Pulsed Drain Current (Note 1 & 2) TA=25 °C Power Dissipation TA=70 °C TC=25 °C TC=100 °C Operating Junction and Storage Temperature Range Symbol BVDSS VGS IDSM ID IDM PDSM PD Tj; Tstg Limits N-channel P-channel 40 -40 ±20 ±20 7.3 -6.6 5.8 -5.3 21 -19 13.3 -12 40 -40 2.5 (Note 3) 1.6 (Note 3) 21 8.4 -55~+150 Unit V A W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Rth,j-c Rth,j-a 6 50 (Note 3) °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad. N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) 40 1.0 - 2.5 V VGS=0V, ID=250μA VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V, VDS=0V IDSS - - 1 25 μA VDS=32V, VGS=0V VDS=32V, VGS=0, Tj=125°C *RDS(ON) - 18.3 26.6 26 35 mΩ ID=12A, VGS=10V ID=10A, VGS=4.5V *GFS - 5.4 - S VDS=10V, ID=7A Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf - 570 855 - 45 - pF VDS=25V, VGS=0V, f=1MHz - 40 - - 7.2 - - 17 24.8 - ns VDS=20V, ID=1A, VGS=10V, RG=6Ω - 7.4 - MTB025C04H8 CYStek Product Specification *Qg *Qgs *Qgd Body Diode *VSD *trr *Qrr - - - CYStech Electronics Corp. Spec. No. : C955H8 Issued Date : 2015.11.02 Revised Date : Page No. : 3/13 69 2.4 - nC VDS=25V, ID=5A, VGS=4.5V 2.2 - 0.75 1 V VGS=0V, IS=1A 6.3 2.4 - ns nC IF=5A dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) -40 -1.0 - -2.5 V VGS=0V, ID=-250μA VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±20V, VDS=0V IDSS - - -1 -25 μA VDS=-32V, VGS=0V VDS=-32V, VGS=0V, Tj=125°C *RDS(ON) - 28.3 41.3 37 54 mΩ ID=-12A, VGS=-10V ID=-10A, VGS=-4.5V *GFS - 8.4 - S VDS=-10V, ID=-5A Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Body Diode *VSD *trr *Qrr - - - 971 80 66 7.8 17.6 61.2 24 10 3.2 3.8 -0.75 8.8 3.6 1457 15 - -1 - pF VDS=-25V, VGS=0V, f=1MHz ns VDS=-20V, ID=-1A, VGS=-10V, RG=6Ω nC VDS=-25V, ID=-4.9A, VGS=-4.5V V VGS=0V, IS=-1A ns nC IF=-5A dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTB025C04H8 CYStek Product Specification CYStech Electronics Corp. Recommended Soldering Footprint Spec. No. : C955H8 Issued Date : 2015.11.02 Revised Date : Page No. : 4/13 unit : mm MTB025C04H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C955H8 Issued Date : 2015.11.02 Revised Date : Page No. : 5/13 Typical Characteristics : Q1( N-channel ) Typical Output Characteristics 40 Brekdown Voltage vs Ambient Temperature 1.4 BVDSS, Normalized Drain-Source Breakdown Voltage ID, Drain Current(A) 35 6V 1.2 30 10V, 9V, 8V, 7V 25 1 5V 20 0.8 15 4.5V 10 5 0 0 VGS=3V 4V 3.5V 1 23 4 VDS, Drain-Source Voltage(V) 5 0.6 ID=250μA, VGS=0V 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 1000 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VSD, Source-Drain Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=3V VGS=4V 100 VGS=4.5V 10 0.01 VGS=10V 0.1 1 10 ID, Drain Current(A) 100 Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 90 80 ID=12A 70 60 50 40 30 20 10 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(ON), Normalized Static DrainSource On-State Resistance 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0 2 46 8 IDR, Rever.


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