HBP1804M65

CYStech Electronics Corp. Octuple High Voltage PNP Epitaxial Planar Transistor HBP1804M65 Spec. No. : C619M65 Issued Date : 2015.10.28 Revised Date : Page No. : 1/7 Description High breakdown voltage. (BVCEO=-400V) Low saturation voltage, typical VCE(sat) =-0.17V at Ic/IB =-20mA/-1mA. Complementary to HBN1803M65 Pb-free lead plating and halogen-free package Equivalent Circuit HBP1804M65 Outline MISWB6×5-18L-A Top View Bottom View HBP1804M65 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C619M65 Issued Date : 2015.10.28 Revised Date : Page No. : 2/7 The following ratings and characteristics apply to each transistor in this device. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -400 -400 -5 -300 1.5 150 -55~+150 Unit V V V mA W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO *VCE(sat) *VCE(sat) *VCE(sat) *VBE(sat) *hFE *hFE fT Cob Min. -400 -400 -5 - - 50 40 - Typ. - - -0.17 -0.18 -0.18 -0.73 100 4.6 Max. -100 -100 -100 -0.3 -0.3 -0.3 -1 300 - Unit V V V nA nA nA V V V V MHz pF Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-400V VCE=-300V, REB=0Ω VEB=-5V IC=-20mA, IB=-1mA IC=-50mA, IB=-5mA IC=-100mA, IB=-20mA IC=-20mA, IB=-2mA VCE=-10V, IC=-10mA VCE=-10V, IC=-100mA VCE=-10V, IC=-10mA, f=5MHz VCB=-10V, IE=0A, f=1MH...