CEU740A

CED740A/CEU740A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 400V, 9A, RDS(ON) = 0.55Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 400 VGS ±30 Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID 9 6.3 Drain Current-Pulsed a IDM 36 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 107 0.7 Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range EAS IAS TJ,Tstg 203 9 -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.4 50 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.Feb http://www.cetsemi.com CED740A/CEU740A Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS ...