CED04N65/CEU04N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 3.2A, RDS(ON) = 2.8Ω ...
CED04N65/CEU04N65
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
650V, 3.2A, RDS(ON) = 2.8Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
VDS VGS ID
IDM PD
650
±30
3.2
2 12.8 70 0.56
Single Pulsed Avalanche Energy d
EAS 220
Single Pulsed Avalanche Current d
IAS 4.2
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.8 50
Units V V A A A W
W/ C mJ A C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2012.Oct http://www.cetsemi.com
CED04N65/CEU04N65
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
...