CES2307A
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -3.2A, RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) =...
CES2307A
P-Channel Enhancement Mode Field Effect
Transistor
FEATURES
-30V, -3.2A, RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package.
D
DS G
SOT-23
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -3.2 IDM -12
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 100
Units V V A A W C
Units C/W
Details are subject to change without notice .
1
Rev 2 2012.May http://www.cetsemi.com
CES2307A
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d
VGS(th) RDS(on)
VGS = VDS, ID = -250µA VGS = -10V, ID = -3.2A VGS = -4.5V, ID = -2.5A
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d
Ciss Coss Crss
VDS = -15V, V...