CEP80N15/CEB80N15
CEF80N15
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP80N15 CE...
CEP80N15/CEB80N15
CEF80N15
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
Type CEP80N15 CEB80N15 CEF80N15
VDSS 150V 150V 150V
RDS(ON) 19mΩ 19mΩ 19mΩ
ID 76A
76A 76A d
@VGS 10V 10V 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 & TO-220F full-pak for through hole.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
VDS VGS ID
IDM e
PD
150
±20
76
55 304 300
2
76 d
55 d 304 d 68 0.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.5 62.5
2.2 65
Units
V V A A A W W/ C C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2012.Mar. http://www.cetsemi.com
CEP80N15/CEB80N15 CEF80N15
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body ...