CED95P04

CED95P04/CEU95P04 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -77A, RDS(ON) =8.6mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C Drain Current-Pulsed a @ TC = 100 C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS -40 VGS ±20 -77 ID -48 IDM -308 73.5 PD 0.59 EAS IAS TJ,Tstg 320 80 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.7 62.5 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 2. 2013.July http://www.cetsemi.com CED95P04/CEU95P04 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Off Characteristics Symbol Test Condition Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS I...