CEB85N75V

CEP85N75V/CEB85N75V N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 75V, 85A, RDS(ON) = 12mΩ @VGS = 12V. RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 75 VGS ±30 Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a ID IDM 85 59 340 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 200 1.33 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range EAS IAS TJ,Tstg 880 45 -55 to 175 Units V V A A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Limit 0.75 62.5 Units C/W C/W Rev 1. 2012.Aug http://www.cetsemi.com CEP85N75V/CEB85N75V Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Symbol Test Condition Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF...