CEP6106/CEB6106
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V. Super ...
CEP6106/CEB6106
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G
D S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
57
±20
56 170 131 0.88
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
EAS IAS TJ,Tstg
117 51 -55 to 175
Units V V A A W
W/ C mJ A C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.14 62.5
Units C/W C/W
Details are subject to change without notice .
1
Rev 2. 2006.Sep http://www.cetsemi.com
CEP6106/CEB6106
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 57V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Ch...