CEP6106/CEB6106
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
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G S
CEB SERIES TO-263(DD-PAK)
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CEP SERIES
TO-220
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S
ABSOLUTE MAXIMUM RATING...
