CEP6036

CEP6036/CEB6036 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID 135 95 Drain Current-Pulsed a IDM 540 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 167 1.1 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range EAS IAS TJ,Tstg 400 40 -55 to 175 Units V V A A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.9 62.5 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.Jun http://www.cetsemi.com CEP6036/CEB6036 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS...