NCE75H21D

http://www.ncepower.com Pb Free Product NCE75H21D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features ● VDSS =75V,ID =210A RDS(ON) < 4mΩ @ VGS=10V ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-263-2L top view Package Marking and Ordering Information Device Marking Device Device Package NCE75H21D NCE75H21D TO-263-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 4) Operating Junction and Storage Temperature Range EAS TJ,TSTG Limit 75 ±20 210 150 840 330 2.2 2200 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.nc...