DatasheetsPDF.com

C2721

Part Number	C2721
Manufacturer	NEC
Description	2SC2721
Published	Feb 7, 2016
Detailed Description	DATA SHEET SILICON TRANSISTOR 2SC2721 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWI...
Datasheet	C2721 PDF File

Overview

DATA SHEET SILICON TRANSISTOR 2SC2721 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Complementary transistor with 2SA1154 • High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Ratings 60 60 5.
0 0.
7 1.
0 1 150 −55 to +150 Unit V V V A A W °C °C PACKAGE DRAWING (UNIT: mm) ELECTRICAL CHARACTERISTICS (T...

Similar Datasheet

C2703 2SC2703 - Toshiba
C2705 2SC2705 - Toshiba Semiconductor
C2710 2SC2710 - Toshiba
C2712 Silicon NPN Transistors - Toshiba
C2712 2SC2712 - Weitron Technology
C2712 NPN EPITAXIAL SILICON TRANSISTOR - WEJ
C2713 2SC2713 - Toshiba
C2714 2SC2714 - Toshiba
C2715 Silicon Epitaxial Planar Transistor - GME
C2717 2SC2717 - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)