IGC99T120T6RM

IGC99T120T6RM IGBT4 Medium Power Chip FEATURES: 1200V Trench + Field Stop technology low switching losses soft turn off positive temperature coefficient easy paralleling This chip is used for: medium power modules Applications: medium power drives C G E Chip Type VCE ICn Die Size IGC99T120T6RM 1200V 100A 10.39 x 9.5 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 10.39 x 9.5 7.987 x 8.923 1.31 x 0.811 mm 2 98.7 / 76.1 120 µm 150 mm 90 grd 140 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7683B, Editi on 1 , 31.10 .2007 MAXIMUM RATINGS Parameter IGC99T120T6RM Symbol Value Unit Collector-Emitter voltage , Tj=25 °C DC collector current, limited by Tjmax VC E IC 1200 1) V A Pulsed collector current, tp limited by Tjmax Ic p u l s 300 A Gate -Emitter voltage VGE ±20 V Operating junction temperature Short circuit data 2 ) V GE = 15V, VCC = 800V, Tvj = 150°C Tj tp -40 ... +17 5 10 °C µs Reverse bias safe operating are...