IGBT
IGC07T120T6L
IGBT4 Low Power Chip
Features: • 1200V Trench + Field stop technology • low switching losses • positive t...
Description
IGC07T120T6L
IGBT4 Low Power Chip
Features: 1200V Trench + Field stop technology low switching losses positive temperature coefficient easy paralleling
This chip is used for: low / medium power modules
Applications: low / medium power drives
C G
E
Chip Type IGC07T120T6L
VCE 1200V
ICn 4A
Die Size 2.54 x 2.72 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.pos sible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
2.54 x 2.72
1.029 x 1.248 0.358 x 0.514
mm 2
6.9 / 2.8
115 µm
150 mm
90 grd
2162
Photoimide
3200 nm AlSiCu
Ni Ag –system suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7483C, Edition 1, 31.10.2007
MAXIMUM RATINGS Parameter
IGC07T120T6L
Symbol
Value
Unit
Collector-Emitter voltage , Tj =25 °C DC collector current, limited by Tjmax
VC E IC
1200
1)
V A
Pulsed collector current, tp limited by Tjmax
Ic p u l s
12 A
Gate -Emitter voltage
VGE
±20 V
Operating junction temperature
Tj
-40 ... +175
°C
Short circuit data 2 ) V GE = 15V, VCC = 800V, Tvj = 150°C
tp
10 µs
Reverse bias safe operating area 2 ) (RBSOA) 1) depending on...
Similar Datasheet
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