IGC168T170S8RH

IGC168T170S8RH IGBT3 Power Chip Features:  1700V Trench + Field stop technology  low switching losses and saturation losses  soft turn off  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC Die Size IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal 13.38 x 12.58 11.159 x 10.353 1.674 x 0.899 mm2 168.3 190 µm 200 mm 142 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Reject ink dot size for original and sealed MBB bags Storage environment for open MBB bags Al, <500µm  0.65mm ; max 1.2mm Ambient atmosphere air, Temperature 17°C – 25°C, < 6 month Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793N, L7793U, L7793F, Rev 0.9, 27.06.2014 IGC168T170S8RH Maximum Ratings Parameter Symbol Value Unit Collector-Emitter voltage, Tvj =25 C DC collector current, limited by Tvj max VCE IC 1700 1) V A Pulsed collector current, tp limited by Tvj max Ic,puls 450 A Gate emitter voltage VGE 20 V Junction temperature range Operating junction temperature Sh...