IGBT
IGC142T120T6RM
IGBT4 Medium Power Chip
Features:
• 1200V Trench + Field stop technology • low switching losses • soft ...
Description
IGC142T120T6RM
IGBT4 Medium Power Chip
Features:
1200V Trench + Field stop technology low switching losses soft turnoff
positive temperature coefficient easy paralleling
This chip is used for: medium power modules
Applications: medium power drives
C G
E
Chip Type
VCE ICn
Die Size
IGC142T120T6RM 1200V 150A 11.31 x 12.56 m m2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
11.31 x 12.56
11.04 x 9.80 1.31 x 0.81
mm 2
142.1 / 113.1
120 µm
150 mm
90 grd
94
Photoimide
3200 nm AlSiCu
Ni Ag –system suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693B, Edition 1, 31.10.2007
MAXIMUM RATINGS Parameter
IGC142T120T6RM
Symbol
Value
Uni t
Collector-Emitter voltage, Tj=25 °C DC collector current, limited by Tj max
VC E IC
1200
1)
V A
Pulsed collector current, tp limited by Tj max
Ic, puls
450 A
Gate -Emitter voltage
VGE
±20 V
Maximum junction temperature
Tvj,max
-40 ... +175
°C
Short circuit data 2 ) V GE = 15V, VCC = 800V, Tvj = 150°C
tp, max
10 µs
Reverse bias safe ...
Similar Datasheet
- IGC142T120T6RH IGBT - Infineon
- IGC142T120T6RL IGBT - Infineon
- IGC142T120T6RM IGBT - Infineon