11N50K-MT

UNISONIC TECHNOLOGIES CO., LTD 11N50K-MT Preliminary 11A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N50K-MT is a N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N50K-MT is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.  FEATURES * RDS(ON) < 0.55Ω @ VGS = 10 V, ID = 5.5 A * Fast Switching * With 100% Avalanche Tested  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11N50KL-TF2-T 11N50KG-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F2 Pin Assignment 123 GD S Packing Tube  MARKING www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-B25.e 11N50K-MT Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage Gate to Source Voltage VDSS VGSS 500 ±30 V V Continuous Drain Current TC=25°C TC=100°C ID 11 (Note 2) 7 (Note 2) A A Pulsed Drain Current (Note 3) Single Pulsed Avalanche Energy(Note 4) IDM EAS 44 (Note 2) 500 A mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 4.5 V/ns Power Dissipation PD 50 W Junction ...