740

400V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 740 VDSS RDS(ON) ID 400V 0.55Ω 10.5A Features 10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V Low gate charge ( typical 30nC) Fast switching 100% avalanche tested Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 740 TO-220 0GFD www.goford.cn TEL：0755-86350980 FAX：0755-86350963 740 Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter 740 740F VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 400 10.5 6.6 10.5 6.6 IDM Drain Current- Pulsed (Note 1) 42 42 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) 378 Units V A A A V mJ EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD TJ, TSTG TL Power Dissipation (TC = 25°C) Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 139 1.11 45.5 0.36 -55 to +150 300 W W/°C °C °C Thermal Characte...