FGB40N60SM

FGB40N60SM — 600 V, 40 A Field Stop IGBT September 2013 FGB40N60SM 600 V, 40 A Field Stop IGBT Features Maximum Junction Temperature : TJ =175oC Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A High Input Impedance Fast Switching Tighten Parameter Distribution RoHS Compliant IR Reflow Only Applications Welder, PFC General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for welder and PFC applications where low conduction and switching losses are essential. C COLLECTOR (FLANGE) TO-263AB/D2-PAK GE Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature C G E Ratings 600 ± 20 ± 30 80 40 120 349 174 -55 to +175 -55 to +175 300 Unit V V V A A A W W oC oC oC ©2011 Fairchild Semiconductor Corporation FGB40N60SM Rev. C2 1 www.fairchildsemi.com FGB40N60SM — 600 V, 40 A Field Stop IGBT Ther...