BB202
Low-voltage variable capacitance diode
Rev. 02 — 3 January 2008
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
[email protected] use
[email protected] (email)
The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via
[email protected]). Thank you for your cooperation and understanding,
NXP Semiconductors
NXP Semiconductors
Low-voltage variable capacitance diode
Product specification
BB202
FEATURES • Very steep C/V curve • C0.2: 30.5 pF; C2.3: 9.5 pF • C0.2 to C2.3 ratio: min. 2.5 • Very low series resistance • Ultra small SMD plastic package.
APPLICATIONS • Electronic tuning in FM radio • Voltage Controlled Oscillators (VCO).
DESCRIPTION The BB202 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD523 ultra small SMD plastic package.
MARKING
TYPE NUMBER BB202
MARKING CODE L2
PINNING
PIN DESCRIPTION
1 cathode
2 anode
handboo1k, 2 columns
2
MBK441
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VR IF Tstg Tj
PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature
MIN.
− − −55 −55
MAX. 6 10 +85 +85
UNIT
V mA °C °C
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
IR reverse current
rs diode series resistance Cd diode capacitance
CC-----dd---((--02--..--23--VV----))
capacitance ratio
CONDITIONS
VR = 6 V; see Fig.3 VR = 6 V; Tj = 85 °C; see Fig 3
f = 100 MHz; C = 30 pF
VR = 0.2; f = 1 MHz; see Fig.2 and Fig.4
VR = 2.3; f = 1 MHz; see Fig.2 and Fig.4
f = 1 MHz
MIN. − −
− 28.2
7.2
2.5
TYP. − −
0.35 −
−
−
MAX. 10 100
UNIT nA nA
0.6 Ω 33.5 pF
11.2 pF
−
Rev. 02 - 3 January 2008
2 of 6
NXP Semiconductors
Low-voltage variable capacitance diode
GRAPHICAL DATA
handbook,4fu0ll pagewidth Cd (pF) 30
Product specification
BB202
MBL416
20 10
0 10-1
1 VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
10
103
handbook, halfpage
IR (nA)
102
MBL418
10−3
handbook, halfpage
TCd (K−1)
MBL417
10
1 0 20 40 60 80 100 Tj (°C)
Fig.3 Reverse current as a function of junction temperature; maximum values.
10−140−1
1 VR (V) 10
Fig.4 Temperature coefficient of diode capacitance as a function of reverse voltage; typical values.
Rev. 02 - 3 January 2008
3 of 6
NXP Semiconductors
Low-voltage variable capacitance diode
PACKAGE OUTLINE Plastic surface-mounted package; 2 leads
Product specification
BB202
SOD523
A c
HE
vM A
E bp
1
D
(1)
OUTLINE VERSION
SOD523
IEC
A 2
REFERENCES
JEDEC
JEITA
SC-79
0 0.5 1 mm scale
DIMENSIONS (mm are the original dimensions)
UNIT A bp c D E mm 0.65 0.34 0.17 1.25 0.85
0.58 0.26 0.11 1.15 0.75
Note 1. The marking bar indicates the cathode.
HE
1.65 1.55
v 0.1
EUROPEAN PROJECTION
ISSUE DATE
02-12-13 06-03-16
Rev. 02 - 3 January 2008
4 of 6
NXP Semiconductors
BB202
Low-voltage variable capacitance diode
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet Development
Preliminary [short] data sheet Qualification
Product [short] data sheet
Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet.