SOP8501

SOP8501 Ordering number : ENN8007 SOP8501 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features High breakdown voltage. (VCEO≥400V) Excellent hFE linearlity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg Electrical Characteristics at Ta=25°C Conditions Mounted on a ceramic board (2000mm2✕0.8mm) 1unit Mounted on a ceramic board (2000mm2✕0.8mm) 1unit Parameter [PNP] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Turn-ON Time Storage Time Fall Time Symbol Conditions ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob ton tstg tf VCB=--300V, IE=0 VEB=--4V, IC=0 VCE=--10V, IC=--100mA VCE=--10V, IC=--50mA IC=--200mA, IB=--20mA IC=--200mA, IB=--20mA IC=--10µA, IE=0 IC=--1mA, RBE=∞ IE=--10µA, IC=0 VCB=--30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit PNP NPN --400 400 --400 400 --5 5 --1 0.2 --2 0.4 1.3 1.6 150 --55 to +150 Unit V V V A A W W...