NCE2302B

http://www.ncepower.com Pb Free Product NCE2302B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 3.3A RDS(ON) < 60mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment Application ● Battery protection ● Load switch ● Power management SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 2302B NCE2302B SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±12 3.3 16 0.9 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 139 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=20V,VGS=0V Min Typ Max Unit 20 22 -- 1 V μ...