Automotive P-Channel MOSFET
www.vishay.com
SQD50P03-07
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS...
Description
www.vishay.com
SQD50P03-07
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration
- 30 0.007 0.011 - 50 Single
FEATURES TrenchFET® Power MOSFET AEC-Q101 Qualifiedd
100 % Rg and UIS Tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
TO-252
S
G
GDS Top View
Drain Connected to Tab
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
TO-252 SQD50P03-07-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TC = 25 °C TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationb
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT - 30 ± 20 - 50 - 50 - 50 - 200 - 50 125 136 45 - 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing.
PCB Mountc
SYMBOL RthJA RthJC
LIMIT 50 1.1
UNIT V
A
mJ W °C
UNIT °C/W
S12-1848-Rev. B, 30-Jul-12
1
Document Number: 67014
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