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SQD23N06-31L Dataheets PDF



Part Number SQD23N06-31L
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQD23N06-31L DatasheetSQD23N06-31L Datasheet (PDF)

www.vishay.com SQD23N06-31L Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package 60 0.031 0.045 23 Single TO-252 FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • AEC-Q101 qualified d • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D TO-252 Drain connected to tab G S D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM.

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www.vishay.com SQD23N06-31L Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package 60 0.031 0.045 23 Single TO-252 FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • AEC-Q101 qualified d • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D TO-252 Drain connected to tab G S D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a TC = 25 °C TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation b TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 23 13 30 90 20 20 37 12 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. SYMBOL RthJA RthJC LIMIT 50 4 UNIT V A mJ W °C UNIT °C/W S15-1873-Rev. C, 10-Aug-15 1 Document Number: 68869 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SQD23N06-31L Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic b VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V VDS = 60 V VGS = 0 V VDS = 60 V, TJ = 125 °C VGS = 0 V VDS = 60 V, TJ = 175 °C VGS = 10 V VDS ≥ 5 V VGS = 10 V ID = 15 A VGS = 10 V ID = 15 A, TJ = 125 °C VGS = 10 V ID = 15 A, TJ = 175 °C VGS = 4.5 V ID = 10 A VDS = 15 V, ID = 15 A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Time c td(on) Rise Time c tr Turn-Off Delay Time c td(off) Fall Time c tf Source-Drain Diode Ratings and Characteristics b VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 30 V, ID = 23 A f = 1 MHz VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 1 Ω Pulsed Current a Forward Voltage ISM VSD IF = 15 A, VGS = 0 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing..


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