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SQD23N06-31L
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package
60 0.031 0.045
23 Single TO-252
FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • AEC-Q101 qualified d • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D
TO-252
Drain connected to tab
G
S D G Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current Continuous Source Current (Diode Conduction) a
TC = 25 °C TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation b
TC = 25 °C TC = 125 °C
Operating Junction and Storage Temperature Range
VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 60 ± 20 23 13 30 90 20 20 37 12
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain)
PCB Mount c
Notes
a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing.
SYMBOL RthJA RthJC
LIMIT 50 4
UNIT V
A
mJ W °C
UNIT °C/W
S15-1873-Rev. C, 10-Aug-15
1
Document Number: 68869
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SQD23N06-31L
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b Dynamic b
VDS VGS(th) IGSS IDSS ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 60 V
VGS = 0 V
VDS = 60 V, TJ = 125 °C
VGS = 0 V
VDS = 60 V, TJ = 175 °C
VGS = 10 V
VDS ≥ 5 V
VGS = 10 V
ID = 15 A
VGS = 10 V
ID = 15 A, TJ = 125 °C
VGS = 10 V
ID = 15 A, TJ = 175 °C
VGS = 4.5 V
ID = 10 A
VDS = 15 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 30 V, ID = 23 A
f = 1 MHz
VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 1 Ω
Pulsed Current a Forward Voltage
ISM VSD IF = 15 A, VGS = 0 V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing..