DB107G

Single Phase Glass Passivated Silicon Bridge Rectifier DB105G thru DB107G VRRM = 600 V - 1000 V IO = 1 A Features Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique High surge current capability Small size, simple installation Types from 600 V up to 1000 V VRRM Not ESD Sensitive Mechanical Data Case: Molded plastic Terminals: Plated terminals, solderable per MIL-STD202, Method 208 Polarity: Polarrity symbols marked on the body Mounting position: Any DB Package Maximum ratings at Tc = 25 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg DB105G 600 420 600 -55 to 150 -55 to 150 Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Conditions DB105G Maximum average forward rectified current Peak forward surge current Maximum instantaneous forward voltage drop Maximum DC reverse current at rated DC blocking voltage Typical junction capacitance Typical thermal resistance IO IFSM VF IR Cj RΘJC Ta = 40 °C tp = 8.3 ms, half sine IF = 1.0 A Ta = 25 °C Ta = 125 °C 1.0 30 1.1 5 500 25 20 DB106G 800 560 800 -55 to 150 -55 to 150 DB107G 1000 700 1000 -55 to 150 -55 to 150 DB106G 1.0 30 1.1 5 500 25 20 DB107G 1.0 30 1.1 5 500 25 2...