1N3210

Silicon Standard Recovery Diode Features High Surge Capability Types from 50 V to 300 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3208 thru 1N3211R VRRM = 50 V - 300 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3208 (R) 1N3209 (R) 1N3210 (R) 1N3211 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 150 °C TC = 25 °C, tp = 8.3 ms 50 100 200 35 70 140 50 100 200 15 15 15 297 297 297 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 300 210 300 15 297 -55 to 150 -55 to 150 Unit V V V A A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3208 (R) 1N3209 (R) 1N3210 (R) 1N3211 (R) Unit Diode forward voltage VF IF = 15 A, Tj = 25 °C 1.5 1.5 1.5 1.5 V Reverse current IR VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 150 °C 10 10 10 10 10 10 10 μA 10 mA Thermal characteristics Thermal resistance, junction case RthJC 0.65 0.65 0.65 0.65 °C/W www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 1N3208 thru 1N3211R www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2 1N3208 thru 1N3211R Package dimensions and terminal con...