Silicon Standard Recovery Diode
Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive
Not...
Description
Silicon Standard Recovery Diode
Features High Surge Capability Types from 50 V to 600 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N1199A thru 1N1206AR
VRRM = 50 V - 600 V IF = 12 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit
Repetitive peak reverse voltage RMS reverse voltage
DC blocking voltage
Continuous forward current
VRRM
VRMS VDC IF
TC ≤ 150 °C
50 100 200
35 70 140 50 100 200 12 12 12
Surge non-repetitive forward current, Half Sine Wave
IF,SM TC = 25 °C, tp = 8.3 ms
240
240
240
400 600 V 280 420 V 400 600 V 12 12 A
240 240 A
Operating temperature Storage temperature
Tj Tstg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
°C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit
Diode forward voltage
Reverse current
Thermal characteristics Thermal resistance, junction case
VF IR
RthJC
IF = 12 A, Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 175 °C
1.1 10 15
2.00
1.1 10 15
2.00
1.1 10 15
2.00
1.1 1.1 V 10 10 μA 15 15 mA
2.00 2.00 °C/W
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1N1199A thru 1N1206AR
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