1N1126A

Silicon Standard Recovery Diode Features High Surge Capability Types from 50 V to 600 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1199A thru 1N1206AR VRRM = 50 V - 600 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 150 °C 50 100 200 35 70 140 50 100 200 12 12 12 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 240 240 240 400 600 V 280 420 V 400 600 V 12 12 A 240 240 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit Diode forward voltage Reverse current Thermal characteristics Thermal resistance, junction case VF IR RthJC IF = 12 A, Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 175 °C 1.1 10 15 2.00 1.1 10 15 2.00 1.1 10 15 2.00 1.1 1.1 V 10 10 μA 15 15 mA 2.00 2.00 °C/W www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 1N1199A thru 1N1206AR www.genesicsemi.com/silicon-products/standa...