HN4B102J
TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
HN4B102J
MOS Gate Drive Applications Switching Applications
Small footprint due to a small and thin package High DC current gain : PNP hFE = 200 to 500 (IC =－0.2 A)
: NPN hFE = 200 to 500 (IC = 0.2 A) Low collector-emitter saturation : PNP VCE (sat) =－0.20 V (max)
: NPN VCE (sa...
