Document
NCP3030A, NCP3030B, NCV3030A, NCV3030B
Synchronous PWM Controller
The NCP3030 is a PWM device designed to operate from a wide input range and is capable of producing an output voltage as low as 0.6 V. The NCP3030 provides integrated gate drivers and an internally set 1.2 MHz (NCP3030A) or 2.4 MHz (NCP3030B) oscillator. The NCP3030 also has an externally compensated transconductance error amplifier with an internally fixed soft−start. Protection features include lossless current limit and short circuit protection, output overvoltage protection, output undervoltage protection, and input undervoltage lockout. The NCP3030 is currently available in a SOIC−8 package.
Features
• Input Voltage Range from 4.7 V to 28 V • 1.2 MHz Operation (NCP3030B – 2.4 MHz) • 0.8 V Internal Reference Voltage • Internally Programmed 1.8 ms Soft−Start (NCP3030B – 1.3 ms) • Current Limit and Short Circuit Protection • Transconductance Amplifier with External Compensation • Input Undervoltage Lockout • Output Overvoltage and Undervoltage Detection • NCV Prefix for Automotive and Other Applications Requiring Site
and Change Controls
• These are Pb−Free Devices
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8 1
SOIC−8 NB CASE 751
MARKING DIAGRAM
8
3030x ALYW
G
1
3030x
A L Y W G
= Specific Device Code x = A or B = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package
VIN CIN
CBST VCC BST
HSDR
Q1
PIN CONNECTIONS
VCC COMP
FB GND
BST HSDR VSW LSDR
COMP
VSW
L0 Vout
ORDERING INFORMATION
Device
Package
Shipping†
RC
CC1 FB
LSDR
Q2 RFB1
NCP3030ADR2G SOIC−8 2500 / Tape & Reel
C0 (Pb−Free)
CC2
GND
RISET
RFB2
NCP3030BDR2G SOIC−8 2500 / Tape & Reel
(Pb−Free)
Figure 1. Typical Application Circuit
NCV3030ADR2G SOIC−8 2500 / Tape & Reel (Pb−Free)
NCV3030BDR2G SOIC−8 2500 / Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
July, 2018 − Rev. 2
1
Publication Order Number: NCP3030/D
NCP3030A, NCP3030B, NCV3030A, NCV3030B
VCC
INTERNAL BIAS POR/STARTUP THERMAL SD
VC BOOST CLAMP
COMP FB
OSCILLATOR
CLK/ DMAX/ SOFT START
RAMP
1.5 V
GATE DRIVE LOGIC
REF
OTA
+ −
PWM COMP
LEVEL SHIFT
VCC
CURRENT SAMPLE &
LIMIT
HOLD
ISET VC
+ −
OOV OUV + −
Figure 2. NCP3030 Block Diagram
BST_CHRG
BST HSDR VSW
LSDR
GND
PIN FUNCTION DESCRIPTION
Pin Pin Name
Description
1 VCC The VCC pin is the main voltage supply input. It is also used in conjunction with the VSW pin to sense current in the high side MOSFET.
2 COMP The COMP pin connects to the output of the Operational Transconductance Amplifier (OTA) and the positive terminal of the PWM comparator. This pin is used in conjunction with the FB pin to compensate the voltage mode control feedback loop.
3 FB The FB pin is connected to the inverting input of the OTA. This pin is used in conjunction with the COMP pin to compensate the voltage mode control feedback loop.
4
GND
Ground Pin
5 LSDR The LSDR pin is connected to the output of the low side driver which connects to the gate of the low side
N−FET. It is also used to set the threshold of the current limit circuit (ISET) by connecting a resistor from LSDR to GND.
6
VSW
The VSW pin is the return path for the high side driver. It is also used in conjunction with the VCC pin to sense
current in the high side MOSFET.
7 HSDR The HSDR pin is connected to the output of the high side driver which connects to the gate of the high side N−FET.
8 BST The BST pin is the supply rail for the gate drivers. A capacitor must be connected between this pin and the VSW pin.
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NCP3030A, NCP3030B, NCV3030A, NCV3030B
ABSOLUTE MAXIMUM RATINGS (measured vs. GND pin 8, unless otherwise noted)
Rating
Symbol
High Side Drive Boost Pin
BST
Boost to VSW differential voltage
BST−VSW
COMP
COMP
VMAX 45 13.2
5.5
VMIN −0.3 −0.3
−0.3
Unit V V V
Feedback High−Side Driver Output Low−Side Driver Output Main Supply Voltage Input Switch Node Voltage Maximum Average Current
VCC, BST, HSDRV, LSDRV, VSW, GND Operating Junction Temperature Range (Note 1) Maximum Junction Temperature Storage Temperature Range Thermal Characteristics − SOIC−8 Plastic Package (Note 2)
Thermal Resistance Junction−to−Air (Note 3)
FB HSDR LSDR VCC VSW
Imax
TJ TJ(MAX)
Tstg RqJA
5.5 −0.3 40 −0.3 13.2 −0.3 40 −0.3 40 −0.6
130 −40 to +140
+150 −55 to +150
110 165
V V V V V mA
°C °C °C °C/W
Lead Temperature Soldering (10 sec): Reflow (SMD styles only) Pb−Free
RF
260 Peak
°C
(Note 4)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The maximum package power dissipation limit must not be exceeded.
TJ(m.