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BYQ72EK-200 Dataheets PDF



Part Number BYQ72EK-200
Manufacturers NXP
Logo NXP
Description Dual ultrafast power diode
Datasheet BYQ72EK-200 DatasheetBYQ72EK-200 Datasheet (PDF)

TO3P BYQ72EK-200 Dual ultrafast power diode 14 May 2015 Product data sheet 1. General description Dual ultrafast power diode in a SOT1259 (3-lead TO-3P) plastic package. 2. Features and benefits • Very low on-state loss • Fast switching • Soft recovery characteristic minimizes power consuming oscillations • High reverse surge capability • High thermal cycling performance • Low thermal resistance 3. Applications Output rectifiers in high-frequency switched-mode power supplies 4. Quick refer.

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TO3P BYQ72EK-200 Dual ultrafast power diode 14 May 2015 Product data sheet 1. General description Dual ultrafast power diode in a SOT1259 (3-lead TO-3P) plastic package. 2. Features and benefits • Very low on-state loss • Fast switching • Soft recovery characteristic minimizes power consuming oscillations • High reverse surge capability • High thermal cycling performance • Low thermal resistance 3. Applications Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5; Tmb ≤ 119 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 Static characteristics VF forward voltage IF = 15 A; Tj = 150 °C; Fig. 6 Dynamic characteristics trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 200 V - - 15 A - 0.78 0.9 V - 18 25 ns Scan or click this QR code to view the latest information for this product NXP Semiconductors BYQ72EK-200 Dual ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 A1 anode 1 2 K cathode 3 A2 anode 2 mb mb mounting base; connected to cathode Graphic symbol A1 A2 K sym125 123 TO3P (SOT1259) 6. Ordering information Table 3. Ordering information Type number Package Name BYQ72EK-200 TO3P Description Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO3P Version SOT1259 7. Marking Table 4. Marking codes Type number BYQ72EK-200 Marking code BYQ72EK-200 BYQ72EK-200 Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 11 NXP Semiconductors BYQ72EK-200 Dual ultrafast power diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM repetitive peak reverse voltage VRWM crest working reverse voltage VR reverse voltage DC IF(AV) average forward current δ = 0.5; Tmb ≤ 119 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 IO(AV) average output current δ = 0.5; Tmb ≤ 119 °C; square-wave pulse; both diodes conducting IFSM non-repetitive peak forward tp = 10 ms; Tj(init) = 25 °C; sine-wave current pulse; per diode; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; per diode; Fig. 4 IRRM repetitive peak reverse current tp = 2 µs; per diode; δ = 0.001 IRSM non-repetitive peak reverse current tp = 100 µs; per diode Tstg storage temperature Tj junction temperature Electrostatic discharge VESD electrostatic discharge voltage C = 250 pF; R = 1.5 kΩ; HBM Min Max Unit - 200 V - 200 V - 200 V - 15 A - 30 A - 200 A - 220 A - 0.2 A - 0.2 A -40 150 °C - 150 °C - 8V BYQ72EK-200 Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 11 NXP Semiconductors BYQ72EK-200 Dual ultrafast power diode 25 Ptot (W) 20 15 10 5 aaa-016846 δ=1 0.2 0.1 0.5 15 Ptot (W) 10 5 aaa-016847 a = 1.57 1.9 2.2 2.8 4.0 0 0 5 10 15 IF(AV) = IF(RMS) × √δ Vo = 0.79 V; Rs = 0.008 Ω 20 25 IF(AV) (A) 0 0 5 10 IF(AV) (A) a = form factor = I F(RMS) / IF(AV) Vo = 0.79 V; Rs = 0.008 Ω 15 Fig. 1. Forward power dissipation as a function of Fig. 2. average forward current; square waveform; per diode; maximum values Forward power dissipation as a function of average forward current; sinusoidal waveform; per diode; maximum values 20 aaa-016848 104 aaa-016849 IF(AV) (A) 15 119 °C IFSM (A) 103 10 5 0 -50 0 50 100 150 200 Tmb (°C) Fig. 3. Average forward current as a function of mounting base temperature; per diode; maximum values 102 IF IFSM tp t Tj(init) = 25 °C max 10 10-5 10-4 10-3 tp (s) 10-2 Fig. 4. Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; per diode; maximum values BYQ72EK-200 Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 11 NXP Semiconductors BYQ72EK-200 Dual ultrafast power diode 9. Thermal characteristics Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient Conditions with heatsink compound; per diode; Fig. 5 with heatsink compound; both diodes conducting in free air 10 Zth(j-mb) (K/W) 1 Min Typ Max Unit - 1.1 2 K/W - 0.7 1.2 K/W - 45 - K/W aaa-016850 10-1 δ = 0.5 δ = 0.3 10-2 δ = 0.1 δ = 0.05 δ = 0.02 10-3 δ = 0.01 P tp δ= T 10-4 10-6 10-5 single pulse 10-4 10-3 10-2 10-1 tp T 1 tp (s) t 10 Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration; per diode; maximum values BYQ72EK-200 Product data.


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