Document
TO3P
BYQ72EK-200
Dual ultrafast power diode
14 May 2015
Product data sheet
1. General description
Dual ultrafast power diode in a SOT1259 (3-lead TO-3P) plastic package.
2. Features and benefits
• Very low on-state loss • Fast switching • Soft recovery characteristic minimizes power consuming oscillations • High reverse surge capability • High thermal cycling performance • Low thermal resistance
3. Applications
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
IF(AV)
average forward current
δ = 0.5; Tmb ≤ 119 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3
Static characteristics
VF
forward voltage
IF = 15 A; Tj = 150 °C; Fig. 6
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; Fig. 7
Min Typ Max Unit - - 200 V - - 15 A
- 0.78 0.9 V - 18 25 ns
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NXP Semiconductors
BYQ72EK-200
Dual ultrafast power diode
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 A1 anode 1
2 K cathode
3 A2 anode 2
mb mb mounting base; connected to cathode
Graphic symbol
A1 A2
K
sym125
123
TO3P (SOT1259)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BYQ72EK-200
TO3P
Description
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO3P
Version SOT1259
7. Marking
Table 4. Marking codes Type number BYQ72EK-200
Marking code BYQ72EK-200
BYQ72EK-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 11
NXP Semiconductors
BYQ72EK-200
Dual ultrafast power diode
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
VRWM
crest working reverse voltage
VR reverse voltage
DC
IF(AV)
average forward current
δ = 0.5; Tmb ≤ 119 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3
IO(AV)
average output current
δ = 0.5; Tmb ≤ 119 °C; square-wave pulse; both diodes conducting
IFSM
non-repetitive peak forward
tp = 10 ms; Tj(init) = 25 °C; sine-wave
current
pulse; per diode; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; per diode; Fig. 4
IRRM
repetitive peak reverse current tp = 2 µs; per diode; δ = 0.001
IRSM
non-repetitive peak reverse current
tp = 100 µs; per diode
Tstg storage temperature
Tj junction temperature
Electrostatic discharge
VESD
electrostatic discharge voltage C = 250 pF; R = 1.5 kΩ; HBM
Min Max Unit - 200 V - 200 V - 200 V - 15 A
- 30 A
- 200 A
- 220 A
- 0.2 A - 0.2 A
-40 150 °C - 150 °C
- 8V
BYQ72EK-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 11
NXP Semiconductors
BYQ72EK-200
Dual ultrafast power diode
25 Ptot (W)
20
15
10
5
aaa-016846
δ=1
0.2 0.1
0.5
15 Ptot (W)
10
5
aaa-016847
a = 1.57 1.9 2.2
2.8
4.0
0 0 5 10 15
IF(AV) = IF(RMS) × √δ Vo = 0.79 V; Rs = 0.008 Ω
20 25 IF(AV) (A)
0 0 5 10 IF(AV) (A)
a = form factor = I F(RMS) / IF(AV) Vo = 0.79 V; Rs = 0.008 Ω
15
Fig. 1.
Forward power dissipation as a function of
Fig. 2.
average forward current; square waveform; per
diode; maximum values
Forward power dissipation as a function of average forward current; sinusoidal waveform; per diode; maximum values
20
aaa-016848
104
aaa-016849
IF(AV) (A)
15
119 °C
IFSM (A)
103
10
5
0 -50 0 50 100 150 200
Tmb (°C)
Fig. 3.
Average forward current as a function of mounting base temperature; per diode; maximum values
102 IF
IFSM
tp t
Tj(init) = 25 °C max
10
10-5
10-4
10-3
tp (s)
10-2
Fig. 4.
Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; per diode; maximum values
BYQ72EK-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
4 / 11
NXP Semiconductors
BYQ72EK-200
Dual ultrafast power diode
9. Thermal characteristics
Table 6. Symbol Rth(j-mb)
Thermal characteristics Parameter
thermal resistance from junction to mounting base
Rth(j-a)
thermal resistance from junction to ambient
Conditions
with heatsink compound; per diode; Fig. 5
with heatsink compound; both diodes conducting
in free air
10 Zth(j-mb)
(K/W)
1
Min Typ Max Unit
-
1.1 2
K/W
- 0.7 1.2 K/W
- 45 - K/W
aaa-016850
10-1
δ = 0.5
δ = 0.3 10-2 δ = 0.1
δ = 0.05
δ = 0.02 10-3 δ = 0.01
P
tp δ= T
10-4 10-6
10-5
single pulse
10-4
10-3
10-2
10-1
tp T
1 tp (s)
t 10
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration; per diode; maximum values
BYQ72EK-200
Product data.