Document
TO-247
BYC30W-600P
Hyperfast power diode
10 February 2014
Product data sheet
1. General description
Hyperfast power diode in a SOD142 (2-lead TO247) plastic package.
2. Features and benefits
• Low leakage current • Low thermal resistance • Low reverse recovery current • Reduces switching losses in associated MOSFET or IGBT
3. Applications
• Active PFC in air conditioner • Continuous Current Mode (CCM) Power Factor Correction (PFC) • Half-bridge/full-bridge switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
IF(AV)
average forward current
δ = 0.5; Tmb ≤ 115 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3
Static characteristics
VF
forward voltage
IF = 30 A; Tj = 150 °C; Fig. 6
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7
Min Typ Max Unit - - 600 V - - 30 A
- 1.38 1.8 V - 18 22 ns
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5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 K cathode
2 A anode
mb mb mounting base; connected to cathode
BYC30W-600P
Hyperfast power diode
Graphic symbol
KA 001aaa020
12
TO-247 (SOD142)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BYC30W-600P
TO-247
Description
Plastic Single-ended through-hole package; Heatsink mounted; 1 mounting hole; 2-lead TO-247
Version SOD142
7. Marking
Table 4. Marking codes Type number BYC30W-600P
Marking code BYC30W-600P
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
VRWM
crest working reverse voltage
VR reverse voltage
DC
IF(AV)
average forward current
δ = 0.5; Tmb ≤ 115 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3
IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; Tmb ≤ 115 °C; square-wave pulse
BYC30W-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 February 2014
Min Max Unit - 600 V - 600 V - 600 V - 30 A
- 60 A
© NXP N.V. 2014. All rights reserved
2/9
NXP Semiconductors
BYC30W-600P
Hyperfast power diode
Symbol IFSM
Tstg Tj
90 Ptot (W)
60
30
Parameter non-repetitive peak forward current
storage temperature junction temperature
Conditions
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4
Min Max Unit - 270 A
- 300 A
-65 175 °C - 175 °C
003aak738
δ=1
0.5
0.2 0.1
60 Ptot (W)
40
20
003aak739
a = 1.57
1.9 2.2 2.8
4.0
0 0 10 20 30 40 50 IF(AV) (A)
Fig. 1.
Forward power dissipation as a function of average forward current; square waveform; maximum values
0 0 10 20 30 IF(AV) (A)
Fig. 2.
Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values
45 IF(AV)
(A) 30
aaa-010282
115 °C
104
IFSM (A)
103
aaa-010283
15
102 IF
IFSM
0 -50 0 50 100 150 200
Tmb (°C)
tp t
10 Tj(init) = 25 °C max
10-5
10-4
10-3
tp (s)
10-2
Fig. 3.
Forward current as a function of mounting base Fig. 4. temperature; maximum values
Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values
BYC30W-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 February 2014
© NXP N.V. 2014. All rights reserved
3/9
NXP Semiconductors
BYC30W-600P
Hyperfast power diode
9. Thermal characteristics
Table 6. Symbol Rth(j-mb)
Rth(j-a)
Thermal characteristics Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions with heatsink compound; Fig. 5
in free air
10 Zth(j-mb)
(K/W)
1
Min Typ Max Unit - - 1 K/W - 45 - K/W
aaa-010284
10-1
δ = 0.5 10-2 δ = 0.3
δ = 0.1
δ = 0.05 10-3 δ = 0.02
P
δ
=
tp T
10-4 10-6
10-5
δ = 0.01 single pulse
10-4
10-3
10-2
10-1
tp T
1 tp (s)
t 10
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
VF forward voltage
IR reverse current
Dynamic characteristics Qr recovered charge
Conditions
IF = 30 A; Tj = 25 °C; Fig. 6 IF = 30 A; Tj = 150 °C; Fig. 6 VR = 600 V; Tj = 25 °C VR = 600 V; Tj = 150 °C
IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7
Min Typ Max Unit
- 2 2.75 V - 1.38 1.8 V - - 10 µA - - 1 mA
- 50 - nC
- 280 - nC
BYC30W-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 February 2014
© NXP N.V. 2014. All rights reserved
4/9
NXP Semiconductors
BYC30W-600P
Hyperfast power diode
Symbol trr
IRM
Parameter
Conditions
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 2.