DatasheetsPDF.com

BYC30W-600P Dataheets PDF



Part Number BYC30W-600P
Manufacturers NXP
Logo NXP
Description Hyperfast power diode
Datasheet BYC30W-600P DatasheetBYC30W-600P Datasheet (PDF)

TO-247 BYC30W-600P Hyperfast power diode 10 February 2014 Product data sheet 1. General description Hyperfast power diode in a SOD142 (2-lead TO247) plastic package. 2. Features and benefits • Low leakage current • Low thermal resistance • Low reverse recovery current • Reduces switching losses in associated MOSFET or IGBT 3. Applications • Active PFC in air conditioner • Continuous Current Mode (CCM) Power Factor Correction (PFC) • Half-bridge/full-bridge switched-mode power supplies 4. Q.

  BYC30W-600P   BYC30W-600P


Document
TO-247 BYC30W-600P Hyperfast power diode 10 February 2014 Product data sheet 1. General description Hyperfast power diode in a SOD142 (2-lead TO247) plastic package. 2. Features and benefits • Low leakage current • Low thermal resistance • Low reverse recovery current • Reduces switching losses in associated MOSFET or IGBT 3. Applications • Active PFC in air conditioner • Continuous Current Mode (CCM) Power Factor Correction (PFC) • Half-bridge/full-bridge switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5; Tmb ≤ 115 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 Static characteristics VF forward voltage IF = 30 A; Tj = 150 °C; Fig. 6 Dynamic characteristics trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 600 V - - 30 A - 1.38 1.8 V - 18 22 ns Scan or click this QR code to view the latest information for this product NXP Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 K cathode 2 A anode mb mb mounting base; connected to cathode BYC30W-600P Hyperfast power diode Graphic symbol KA 001aaa020 12 TO-247 (SOD142) 6. Ordering information Table 3. Ordering information Type number Package Name BYC30W-600P TO-247 Description Plastic Single-ended through-hole package; Heatsink mounted; 1 mounting hole; 2-lead TO-247 Version SOD142 7. Marking Table 4. Marking codes Type number BYC30W-600P Marking code BYC30W-600P 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM repetitive peak reverse voltage VRWM crest working reverse voltage VR reverse voltage DC IF(AV) average forward current δ = 0.5; Tmb ≤ 115 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; Tmb ≤ 115 °C; square-wave pulse BYC30W-600P Product data sheet All information provided in this document is subject to legal disclaimers. 10 February 2014 Min Max Unit - 600 V - 600 V - 600 V - 30 A - 60 A © NXP N.V. 2014. All rights reserved 2/9 NXP Semiconductors BYC30W-600P Hyperfast power diode Symbol IFSM Tstg Tj 90 Ptot (W) 60 30 Parameter non-repetitive peak forward current storage temperature junction temperature Conditions tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 Min Max Unit - 270 A - 300 A -65 175 °C - 175 °C 003aak738 δ=1 0.5 0.2 0.1 60 Ptot (W) 40 20 003aak739 a = 1.57 1.9 2.2 2.8 4.0 0 0 10 20 30 40 50 IF(AV) (A) Fig. 1. Forward power dissipation as a function of average forward current; square waveform; maximum values 0 0 10 20 30 IF(AV) (A) Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values 45 IF(AV) (A) 30 aaa-010282 115 °C 104 IFSM (A) 103 aaa-010283 15 102 IF IFSM 0 -50 0 50 100 150 200 Tmb (°C) tp t 10 Tj(init) = 25 °C max 10-5 10-4 10-3 tp (s) 10-2 Fig. 3. Forward current as a function of mounting base Fig. 4. temperature; maximum values Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values BYC30W-600P Product data sheet All information provided in this document is subject to legal disclaimers. 10 February 2014 © NXP N.V. 2014. All rights reserved 3/9 NXP Semiconductors BYC30W-600P Hyperfast power diode 9. Thermal characteristics Table 6. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions with heatsink compound; Fig. 5 in free air 10 Zth(j-mb) (K/W) 1 Min Typ Max Unit - - 1 K/W - 45 - K/W aaa-010284 10-1 δ = 0.5 10-2 δ = 0.3 δ = 0.1 δ = 0.05 10-3 δ = 0.02 P δ = tp T 10-4 10-6 10-5 δ = 0.01 single pulse 10-4 10-3 10-2 10-1 tp T 1 tp (s) t 10 Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Static characteristics VF forward voltage IR reverse current Dynamic characteristics Qr recovered charge Conditions IF = 30 A; Tj = 25 °C; Fig. 6 IF = 30 A; Tj = 150 °C; Fig. 6 VR = 600 V; Tj = 25 °C VR = 600 V; Tj = 150 °C IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 Min Typ Max Unit - 2 2.75 V - 1.38 1.8 V - - 10 µA - - 1 mA - 50 - nC - 280 - nC BYC30W-600P Product data sheet All information provided in this document is subject to legal disclaimers. 10 February 2014 © NXP N.V. 2014. All rights reserved 4/9 NXP Semiconductors BYC30W-600P Hyperfast power diode Symbol trr IRM Parameter Conditions reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 2.


BYC20X-600 BYC30W-600P BYC30WT-600P


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)