MTP3055VL

MTP3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage − Continuous − Single Pulse (tp ≤ 50 μs) Drain Current − Continuous @ 25°C Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation @ 25°C Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 60 60 ±15 ± 20 12 8.0 42 48 0.32 Operating and Storage Temperature Range TJ, Tstg −55 to 175 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG =25 Ω) Thermal Resistance − Junction to Case − Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS RθJC RθJA TL 72 3.13 62.5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ °C/W °C http://onsemi.com 12 AMPERES 60 VOLTS RDS(on) = 180 mΩ N−Channel D G...